Based on the equipment we supplied to Tohoku University, we developed this cluster machine for greater ease of handling.
There are 8 machines with 8-inch targets, and oxides and nitrides can be formed in the reactivity sputtering room.
13 units of 6-inch wafer can be loaded in the load rock room.
In the reactivity sputtering room, it is possible to have bias application by 2 high frequencies of 13.56MHz and 40.68 MHz to have sputters for various materials.
This is also applicable for semiconductor manufacturing equipment.

Equipment specification

[Main measurement - Utility]

Dimension (mm)	5000W x 1925D x 1800H (including power panel and control panel)
Installation area	Approx. 10m2
Weight	Approx. 1700kg
Power voltage	400/230 Volt (Approx. 25 kVA)
Cooling water	approx. 12 l/min (Pressure 4-6 kg/cm2)
Process Gas	Ar/O2/N2
Film deposition room material	SUS304

DC magnetron
4 8inch

 

[Chamber specification]

Film deposition room1	Metal film deposition room (Φ 850)	8-inch magnetron x 4 machines
Film deposition room2	Metal film deposition room (Φ 850)	8-inch magnetron x 4 machines
Film deposition room3	Reactive sputtering room (Φ 260)	8-inch magnetron x 1 machine
Etching room	RF etching (Φ 260)
Load rock / magazine room / transfer room
Target vacuum degree	10-7 Pa’s
Substrate size	6 -inch x 13 units

DC spattering chamber magnetic forming
/ for substrate heating

Usage

1. Metal, magnetic film sputtering
2. Insulation film, reactive sputtering etc

A sample can be formed in our clean room on customer's request.
We customize to meet customer's needs. Please do not hesitate to contact us.

Ultrahigh Vacuum Multi-Sputtering Equipment
for the laboratory of professor Takahashi, Electro technology Dept., Tohoku University

Equipment specification

Target pressure	Under 5 x 10-8 Pa
Film deposition room construction	Metal flm deposition room	6 members DC spattering (strong magnetic / non-magnetic material)
	Reactive sputtering room	Two cycles excitation RF sputtering
	Plasma oxidation room	Micro wave plasma oxidation (Radial line slot antenna)
	Film deposition room material	Aluminum alloy product (A6061 and others)
Exhaustion	Main exhaustion pump	Ultrahigh vacuum TMP (target pressure 1 x 10-9Pa)
	Coarse exhaustion pump	Scroll type dry pump
Gas	CRP treatment
Seal	All metal or special metal seal
Control	Automatic operation (Programmable)
Substrate	50mm Silicone Substrate / possible to fit 10 units Possible to mask deposition (4 units) When mask is fitted, maximum number of substrates is 6 units
Transfer	Ultrahigh vacuum transfer rod (automatic transfer)

Usage

1. Metal film magnetic film sputtering
2. Insulation film, reactive sputtering
3. Oxidation (nitride) of extremely thin film

Radial line slot antenna (RLSA)